SavantIC Semiconductor Product Specification 2SD1497 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 7 A IC(surge) Collector surge current 16 A 50 W PC Collector power dissipation TC=25 Tj Junction temperature 150 Tstg Storage temperature -45~150 SavantIC Semiconductor Product Specification 2SD1497 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=; VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICEX Collector cut-off current VCE=1500V; VBE=1.5V 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=0.3A ; VCE=5V 10 hFE-2 DC current gain IC=5A ; VCE=5V 5 Fall time ICP=4A;IB1=1.3A; LB=0 tf 2 7 V 600 V 30 2.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD1497