SavantIC Semiconductor Product Specification 2SD905 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage power switching TV horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 650 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 10 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SD905 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=: V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=8A;IB=1.5A 10 V VBEsat Base-emitter saturation voltage IC=8A;IB=1.5A 1.5 V ICES Collector cut-off current VCE=1400V ; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE DC current gain IC=1A ; VCE=5V Fall time IC=6.8A; IB1=1.1A;LB=0 tf CONDITIONS 2 MIN TYP. MAX UNIT 650 V 5 V 8 36 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD905