SavantIC Semiconductor Product Specification 2SD1577 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Wide area of safe operation ·High voltage,high speed APPLICATIONS ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 17 A IB Base current 3.5 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1577 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat V(BR)EBO ICBO CONDITIONS MIN TYP. MAX UNIT IC=4.5A ;IB=2A 2.0 V Base-emitter saturation voltage IC=4.5A ;IB=2A 1.3 V Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCB=750V; IE=0 50 µA VCB=1500V; IE=0 1 mA 50 µA Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=2A ; VCE=10V 4 15 Switching times tstg tf Storage time Fall time IC=4A; LB=10µH IBend=1.5A 2 11 µs 1 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SD1577