SAVANTIC 2SD1632

SavantIC Semiconductor
Product Specification
2SD1632
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage ,high speed
·Built-in damper diode
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VEBO
Emitter-base voltage
Open collector
VALUE
UNIT
1500
V
5
V
IC
Collector current
4
A
ICM
Collector current-peak
15
A
IBM
Base current
3.5
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
130
Tstg
Storage temperature
-55~130
TC=25
SavantIC Semiconductor
Product Specification
2SD1632
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=500mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=1A
1.5
V
VCB=750V; IE=0
50
µA
VCB=1500V; IE=0
1
mA
ICBO
5
UNIT
V
Collector cut-off current
hFE
DC current gain
IC=3A ; VCE=10V
VF
Diode forward voltage
IC=-4A
5
15
2.2
V
9
µs
0.8
µs
Switching times
tstg
Storage time
4
IC=3A
IBend=1A;LLeak=5µH
tf
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
2SD1632