Inchange Semiconductor Product Specification 2SD1729 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 3.5 A ICM Collector current (Pulse) 10 A IB Base current 1.5 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1729 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.8A 1.5 V VCB=750V; IE=0 10 μA VCB=1500V; IE=0 1 mA ICBO hFE 7 UNIT V Collector cut-off current DC current gain IC=0.5A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=10V VF Diode forward voltage IF=-3.5A,IB=0 5 25 2 MHz 2.0 V Switching times ts Storage time 1.5 μs 0.2 μs IC=3A; IB1=0.8A IB2=-1.6A VCC=200V tf Fall time 2 Inchange Semiconductor Product Specification 2SD1729 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3