SAVANTIC 2SD1453

SavantIC Semiconductor
Product Specification
2SD1453
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
1500
V
6
V
VCBO
Collector-base voltage
Open emitter
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
3
A
ICM
Collector current-Peak
3.5
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-45~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1453
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=200mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.8A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.8A
1.5
V
ICES
Collector cut-off current
VCE=1500V; RBE==
0.5
mA
hFE
DC current gain
IC=0.3A ; VCE=5V
VF
Diode forward voltage
IF=3A
2.2
V
Fall time
ICP=2.75A; IB1=0.6A; IB2?-1.3A
0.8
µs
tf
2
6
UNIT
V
6
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD1453