SavantIC Semiconductor Product Specification 2SD1666 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1133 ·High reliability ·Wide area of safe operation APPLICATIONS ·For low-frequency and general-purpose amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 8 A PC Collector dissipation Ta=25 2 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -40~150 SavantIC Semiconductor Product Specification 2SD1666 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=: 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=2A; IB=0.2A 0.6 1.0 V VBE Base-emitter on voltage IC=0.5A ; VCE=5V 0.7 1.0 V ICBO Collector cut-off current VCB=40V; IE=0 100 µA IEBO Emitter cut-off current VEB=4V; IC=0 100 µA hFE-1 DC current gain IC=0.5A ; VCE=5V 70 hFE-2 DC current gain IC=3A ; VCE=5V 20 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 60 pF fT Transition frequency IC=0.5A ; VCE=5V 8 MHz VCEsat CONDITIONS hFE-1 Classifications Q R S 70-140 100-200 140-280 2 MIN TYP. MAX UNIT 280 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1666 SavantIC Semiconductor Product Specification 2SD1666 Silicon NPN Power Transistors 4