SAVANTIC 2SD200

SavantIC Semiconductor
Product Specification
2SD200
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·For color TV horizontal output
applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
6
V
2.5
A
10
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=90
SavantIC Semiconductor
Product Specification
2SD200
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.6A
8.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=500V;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=2A ; VCE=5V
2
MIN
TYP.
MAX
UNIT
600
V
6
V
8
2.5
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD200