Inchange Semiconductor Product Specification 2SD200 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V 2.5 A 10 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=90℃ Inchange Semiconductor Product Specification 2SD200 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V hFE-2 DC current gain IC=2A ; VCE=5V B 2 MIN TYP. MAX UNIT 600 V 6 V 8 2.5 Inchange Semiconductor Product Specification 2SD200 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3