ISC 2SD817

Inchange Semiconductor
Product Specification
2SD817
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3 package
・High voltage ,high reliability
・Wide area of safe operation
APPLICATIONS
・High voltage power switching TV horizontal
deflection output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
6
V
1.5
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD817
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
600
V
VCEsat
Collector-emitter saturation voltage
IC=1.2A; IB=0.3A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=1.2A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=800V;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
μA
hFE
DC current gain
IC=0.3A ; VCE=5V
2
10
30
Inchange Semiconductor
Product Specification
2SD817
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3