SAVANTIC 2SD2012

SavantIC Semiconductor
Product Specification
2SD2012
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1366
·Low collector saturation voltage
·Collector power dissipation:
PC=25W(TC=25 )
APPLICATIONS
·Audio frequency power amplifier and
general purpose switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
3
A
0.5
A
IC
Collector current
IB
Base current
PC
Collector dissipation
Ta=25
2.0
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD2012
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.2A
1.0
V
VBE
Base-emitter on voltage
IC=0.5A;VCE=5V
1.0
V
ICBO
Collector cut-off current
VCB=60V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
µA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
100
hFE-2
DC current gain
IC=2A ; VCE=5V
20
Transition frequency
IC=1A ; VCE=5V
3
MHz
Collector output capacitance
f=1MHz;VCB=10V
35
pF
fT
COB
CONDITIONS
2
MIN
TYP.
MAX
60
UNIT
V
320
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD2012