SavantIC Semiconductor Product Specification 2SD728 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SB692 APPLICATIONS ·For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V 6 A 70 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD728 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 100 hFE-2 DC current gain IC=5A ; VCE=5V 20 Transition frequency IC=1A ; VCE=5V Collector output capacitance IE=0 ;f=1MHz;VCB=10V VCEsat fT COB CONDITIONS 2 MIN TYP. MAX UNIT 7 MHz 160 pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD728