SAVANTIC 2SA679

SavantIC Semiconductor
Product Specification
2SA679 2SA680
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2SC1079/1080
·High power dissipation
APPLICATIONS
·For audio power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2SA679
VCBO
Collector-base voltage
-120
Emitter-base voltage
V
Open base
-100
2SA680
VEBO
V
-100
2SA679
Collector-emitter voltage
UNIT
-120
Open emitter
2SA680
VCEO
VALUE
Open collector
-5
V
IC
Collector current
-12
A
IE
Emitter current
12
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
2SA679 2SA680
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SA679
MIN
TYP.
MAX
UNIT
-120
V
IC=-0.1A ;IB=0
-100
2SA680
Emitter-base breakdown voltage
IE=-10mA ;IC=0
Collector-emitter saturation voltage
IC=-10A; IB=-1A
-3.0
V
VBE
Base-emitter on voltage
IC=-10A ; VCE=-5V
-2.5
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-2A ; VCE=-5V
40
hFE-2
DC current gain
IC=-7A ; VCE=-5V
15
COB
Output capacitance
IE=0 ; VCB=-10V; f=1.0MHz
fT
Transition frequency
IC=-2A ; VCE=-5V
VCEsat
hFE-1 Classifications
R
Y
40-80
70-140
2
-5
V
140
900
pF
6
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SA679 2SA680