SavantIC Semiconductor Product Specification 2SD2101 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·DARLINGTON APPLICATIONS ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector -emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICP Collector current peak 15 A PC Collector power dissipation TC=25 30 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2101 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA; IC=0 200 V V(BR)CEO Collector-emitter breakdown voltage IC=25mA;RBE=; 200 V VCEO(SUS) Collector-emitter sustaining voltage IC=5A; L=5mH 170 V VCE(sat-1) Collector-emitter saturation voltage IC=5A ;IB=10mA 1.5 V VCE(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=100mA 3.0 V VBE(sat-1) Base-emitter saturation voltage IC=5A ;IB=10mA 2.0 V VBE(sat-2) Base-emitter saturation voltage IC=10A ;IB=100mA 3.5 V ICBO Collector cut-off current VCB=180V; IE=0 10 µA ICEO Collector cut-off current VCE=180V; RBE=; 50 µA hFE DC current gain IC=5A ; VCE=3V 2 1500 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SD2101