SavantIC Semiconductor Product Specification 2SD1446 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·High collector to base voltage VCBO ·DARLINGTON APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector -emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A ICP Collector current peak 10 A PC Collector power dissipation TC=25 40 Ta=25 2.0 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1446 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=0.1A; IC=0 VCEO(SUS) Collector-emitter sustaining voltage IC=2A; L=10mH VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.06A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.06A 2.5 V ICBO Collector cut-off current VCB=350V; IE=0 100 µA hFE DC current gain IC=2A ; VCE=2V Transition frequency IC=1A ; VCE=10V; fT 2 5 V 400 V 500 15 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SD1446