SavantIC Semiconductor Product Specification 2SB974 Silicon PNP Power Transistors DESCRIPTION ·With ITO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V -5 A IC Collector current PC Collector power dissipation TC=25 30 Ta=25 1.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB974 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA ;IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-2mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-2mA -2.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -1 µA ICEO Collector cut-off current VCE=-50V; IB=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -5.0 mA hFE DC current gain IC=-2A ; VCE=-2V 2 MIN 2000 TYP. MAX 20000 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 2SB974