SavantIC Semiconductor Product Specification 2SD2331 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage 5 V 3.5 A 1 A 40 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2331 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS Emitter-base breakdown voltage IE=200mA , IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A VBEsat Base-emitter saturation voltage ICBO hFE MIN TYP. MAX 5 UNIT V 3.0 5.0 V IC=3A ;IB=0.8A 1.5 V Collector cut-off current VCB=800V IE=0 10 µA DC current gain IC=0.5A ; VCE=5V fT Transition frequency IC=0.1A ; VCE=10V VF Diode forward voltage IF=3.5A 8 3 MHz 2.0 2 V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SD2331