ISC 2SD2493

Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2493
DESCRIPTION
・With TO-3PN package
・Complement to type 2SB1624
APPLICATIONS
・Audio ,series regulator and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
110
V
VCEO
Collector-emitter voltage
Open base
110
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
6
A
IB
Base current
1
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD2493
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=5mA
2.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=5mA
3.0
V
ICBO
Collector cut-off current
VCB=110V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=5A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
55
pF
fT
Transition frequency
IC=2A ; VCE=12V
60
MHz
0.8
μs
6.2
μs
1.1
μs
110
UNIT
V
5000
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;RL=6Ω
IB1=- IB2=5mA
VCC=30V
hFE Classifications
O
P
Y
5000-12000
6500-20000
15000-30000
2
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD2493