ISC 2SB1626

Inchange Semiconductor
Product Specification
2SB1626
Silicon PNP Darlington Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD2495
APPLICATIONS
・For audio,series regulator and
general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
导体
半
电
R
O
T
UC
Absolute maximum ratings (Ta=25℃)
固
SYMBOL
VCBO
VCEO
VEBO
D
N
O
IC
PARAMETER
M
E
S
GE
Collector-base voltage
N
A
H
INC
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
UNIT
-110
V
-110
V
-5
V
IC
Collector current
-6
A
IB
Base current
-1
A
PC
Collector dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1626
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-5mA
-2.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-5mA
-3.0
V
ICBO
Collector cut-off current
VCB=-110V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-5A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-12V
100
MHz
Collector output capacitance
f=1MHz;VCB=-10V
110
pF
fT
COB
CONDITIONS
导体
半
电
MIN
‹
固
Turn-on time
ts
Storage time
tf
Fall time
G
N
A
CH
IN
hFE Classifications
O
p
Y
5000-12000
6500-20000
15000-30000
2
UNIT
V
5000
R
O
T
UC
OND
IC
M
E
ES
IC=-5A IB1=-IB2=-5mA
VCC=30V ,RL=6Ω
MAX
-110
Switching times
ton
TYP.
1.1
μs
3.2
μs
1.1
μs
Inchange Semiconductor
Product Specification
2SB1626
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3