Inchange Semiconductor Product Specification 2SB1626 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2495 APPLICATIONS ・For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol 导体 半 电 R O T UC Absolute maximum ratings (Ta=25℃) 固 SYMBOL VCBO VCEO VEBO D N O IC PARAMETER M E S GE Collector-base voltage N A H INC Collector-emitter voltage Emitter-base voltage CONDITIONS Open emitter Open base Open collector VALUE UNIT -110 V -110 V -5 V IC Collector current -6 A IB Base current -1 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1626 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-5mA -2.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-5mA -3.0 V ICBO Collector cut-off current VCB=-110V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V 100 MHz Collector output capacitance f=1MHz;VCB=-10V 110 pF fT COB CONDITIONS 导体 半 电 MIN 固 Turn-on time ts Storage time tf Fall time G N A CH IN hFE Classifications O p Y 5000-12000 6500-20000 15000-30000 2 UNIT V 5000 R O T UC OND IC M E ES IC=-5A IB1=-IB2=-5mA VCC=30V ,RL=6Ω MAX -110 Switching times ton TYP. 1.1 μs 3.2 μs 1.1 μs Inchange Semiconductor Product Specification 2SB1626 Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3