SavantIC Semiconductor Product Specification 2SD5075T Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High speed switching APPLICATIONS ·Color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A ICM Collector current-peak 10 A PC Collector power dissipation 75 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD5075T Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.8A 1.5 V IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 µA hFE DC current gain IC=1.5 A ; VCE=5V fT Transition frequency IC=0.5 A ; VCE=10V tf Fall time IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7= 2 8 3 MHz 0.4 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SD5075T