SAVANTIC 2SD5075T

SavantIC Semiconductor
Product Specification
2SD5075T
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·High speed switching
APPLICATIONS
·Color TV horizontal output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
3.5
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
75
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD5075T
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=2.5A;IB=0.8A
8.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A;IB=0.8A
1.5
V
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
ICBO
Collector cut-off current
VCB=800V; IE=0
10
µA
hFE
DC current gain
IC=1.5 A ; VCE=5V
fT
Transition frequency
IC=0.5 A ; VCE=10V
tf
Fall time
IC=3A;IB1=0.8A;IB2=-1.6A
VCC=200V;RL=66.7=
2
8
3
MHz
0.4
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
2SD5075T