SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2557 DESCRIPTION ·With TO-3PN package ·DARLINGTON APPLICATIONS ·Series regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A IB Base current 2 A PC Collector power dissipation 70 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2557 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=1A ;IB=5mA 1.5 V ICBO Collector cut-off current VCB=200V; IE=0 100 µA IEBO Emitter cut-off current VEB=6V; IC=0 5 mA hFE DC current gain IC=1A ; VCE=5V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 110 pF fT Transition frequency IE=0.5A ; VCE=10V 15 MHz 2 MIN TYP. MAX 200 UNIT V 1500 6500 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD2557