SavantIC Semiconductor Product Specification 2SD288 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Collector-base voltage : VCBO=80V ·Collector dissipation : PC=25W(TC=25 ) APPLICATIONS ·Low frequency power amplifier ·Power regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 55 V VEBO Emitter-base voltage Open collector 5 V 3 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD288 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 55 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA; IE=0 80 V V(BR)EBO Emitter-base breakdown votage IE=0.5mA; IC=0 5 V Collector-emitter saturation voltage IC=1 A;IB=0.1 A 1.0 V ICBO Collector cut-off current VCB=50V; IE=0 50 µA IEBO Emitter cut-off current VEB=5V; IC=0 50 µA hFE DC current gain IC=0.5A ; VCE=5V VCEsat CONDITIONS hFE classifications R O Y 40-80 70-140 120-240 2 MIN 40 TYP. MAX 240 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD288 SavantIC Semiconductor Product Specification 2SD288 Silicon NPN Power Transistors 4