ISC KSA614

Inchange Semiconductor
Product Specification
KSA614
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Collector-Base Voltage:VCBO=-80V(Min)
·Collector dissipation:PC=25W@TC=25℃
APPLICATIONS
·Low frequency power amplifier
·Power regulator
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-55
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-3
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
KSA614
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-0.5mA ;IE=0
-55
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-0.5mA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-1A ;IB=-0.1A
-0.5
V
ICBO
Collector cut-off current
VCB=-50V;IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-50
μA
hFE
DC current gain
IC=-0.5A ; VCE=-5V
VCEsat
‹
CONDITIONS
B
hFE classifications
R
O
Y
40-80
70-140
120-240
MIN
2
40
TYP.
MAX
240
UNIT
Inchange Semiconductor
Product Specification
KSA614
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
KSA614
Silicon PNP Power Transistors
4