Inchange Semiconductor Product Specification KSA614 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Collector-Base Voltage:VCBO=-80V(Min) ·Collector dissipation:PC=25W@TC=25℃ APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -55 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -3 A PC Collector power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification KSA614 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-0.5mA ;IE=0 -55 V V(BR)EBO Emitter-base breakdown voltage IE=-0.5mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -0.5 V ICBO Collector cut-off current VCB=-50V;IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V;IC=0 -50 μA hFE DC current gain IC=-0.5A ; VCE=-5V VCEsat CONDITIONS B hFE classifications R O Y 40-80 70-140 120-240 MIN 2 40 TYP. MAX 240 UNIT Inchange Semiconductor Product Specification KSA614 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification KSA614 Silicon PNP Power Transistors 4