SavantIC Semiconductor Product Specification 2SD362 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Collector-base voltage: VCBO=150V ·Collector current :IC=5A ·Collector dissipation : PC=40 (TC=25 ) APPLICATIONS ·For B/W TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 70 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD362 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 150 V V(BR)CEO Collector-emitter breakdown voltage IC=2mA; RBE=: 70 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 8 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 20 µA IEBO Emitter cut-off current VEB=5V; IC=0 20 µA hFE DC current gain IC=5A ; VCE=5V Transition frequency IC=0.5A ; VCE=5V fT hFE classifications N R O 20-50 40-80 70-140 2 20 140 10 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SD362 SavantIC Semiconductor Product Specification 2SD362 Silicon NPN Power Transistors 4