SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A DESCRIPTION ·With TO-220C package ·High voltage :VCBO=200V(min) APPLICATIONS ·For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD386 IC UNIT 200 V 120 V Open base 150 2SD386A VEBO VALUE Emitter-base voltage Open collector 6 2SD386 3 2SD386A 2 Collector current ICM Collector current-Peak PC Collector dissipation V A 10 TC=25 25 Ta=25 1.75 A W Tj Junction temperature 150 Tstg Storage temperature -40~150 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage CONDITIONS 2SD386 MIN TYP. MAX UNIT 120 IC=25mA; IB=0 V 150 2SD386A 2SD386 1.0 IC=1A; IB=0.1A V 2SD386A 1.5 Base-emitter saturation voltage IC=1A; IB=0.1A 1.8 V ICBO Collector cut-off current VCB=180V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE DC current gain IC=0.5A ; VCE=2V Transition frequency IC=0.5A ; VCE=5V fT hFE Classifications C D E F 40-80 60-120 100-200 160-320 2 40 320 8 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3