SAVANTIC 2SD386

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD386 2SD386A
DESCRIPTION
·With TO-220C package
·High voltage :VCBO=200V(min)
APPLICATIONS
·For TV vertical deflection output
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
2SD386
IC
UNIT
200
V
120
V
Open base
150
2SD386A
VEBO
VALUE
Emitter-base voltage
Open collector
6
2SD386
3
2SD386A
2
Collector current
ICM
Collector current-Peak
PC
Collector dissipation
V
A
10
TC=25
25
Ta=25
1.75
A
W
Tj
Junction temperature
150
Tstg
Storage temperature
-40~150
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD386 2SD386A
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
PARAMETER
Collector-emitter
breakdown voltage
Collector-emitter
saturation voltage
CONDITIONS
2SD386
MIN
TYP.
MAX
UNIT
120
IC=25mA; IB=0
V
150
2SD386A
2SD386
1.0
IC=1A; IB=0.1A
V
2SD386A
1.5
Base-emitter saturation voltage
IC=1A; IB=0.1A
1.8
V
ICBO
Collector cut-off current
VCB=180V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5.0
mA
hFE
DC current gain
IC=0.5A ; VCE=2V
Transition frequency
IC=0.5A ; VCE=5V
fT
hFE Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
40
320
8
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD386 2SD386A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3