Inchange Semiconductor Product Specification 2SD386 2SD386A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage :VCBO=200V(min) APPLICATIONS ・For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD386 IC UNIT 200 V 120 Open base 2SD386A VEBO VALUE Emitter-base voltage V 150 Open collector 6 2SD386 3 2SD386A 2 Collector current ICM Collector current-Peak PC Collector dissipation V A 10 TC=25℃ 25 Ta=25℃ 1.75 A W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ Inchange Semiconductor Product Specification 2SD386 2SD386A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD386 VCEsat TYP. IC=25mA; IB=0 V 2SD386 1.0 IC=1A; IB=0.1A V 1.5 Base-emitter saturation voltage IC=1A; IB=0.1A 1.8 V ICBO Collector cut-off current VCB=180V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE DC current gain IC=0.5A ; VCE=2V Transition frequency IC=0.5A ; VCE=5V fT UNIT 150 2SD386A VBEsat MAX 120 2SD386A Collector-emitter saturation voltage MIN hFE Classifications C D E F 40-80 60-120 100-200 160-320 2 40 320 8 MHz Inchange Semiconductor Product Specification 2SD386 2SD386A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3