SAVANTIC 2SD612

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD612 2SD612K
DESCRIPTION
·With TO-126 package
·Complement to type 2SB632/632K
·High collector dissipation
·Wide area of safe operation
APPLICATIONS
·25V/35V, 2A low-frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SD612
VCBO
Collector-base voltage
25
Open base
2SD612K
VEBO
Emitter-base voltage
IC
V
35
2SD612
Collector-emitter voltage
UNIT
25
Open emitter
2SD612K
VCEO
VALUE
V
35
Open collector
5
V
Collector current (DC)
2
A
ICM
Collector current-peak
3
A
PD
Total power dissipation
Ta=25
1
TC=25
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD612 2SD612K
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
2SD612
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
25
IC=1mA; RBE=;
2SD612K
V
35
2SD612
Collector-base
breakdown voltage
UNIT
25
IC=10µA ;IE=0
2SD612K
V
35
Emitter-base breakdown voltage
IE=10µA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=1.5A ;IB=0.15A
0.3
0.8
V
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=0.15A
1.1
1.5
V
ICBO
Collector cut-off current
VCB=20V; IE=0
1
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
µA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
60
hFE-2
DC current gain
IC=1.5A ; VCE=2V
30
Transition frequency
IC=50mA ; VCE=10V
100
MHz
Collector output capacitance
f=1MHz ; VCB=10V
30
pF
0.05
µs
0.10
µs
0.40
µs
fT
COB
5
V
320
Switching times
ton
Turn-on time
tf
Fall time
tstg
IC=500mA ; VCE=12V
IB1=-IB2=50mA
Storage time
hFE-1 Classifications
D
E
F
60-120
100-200
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD612 2SD612K
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD612 2SD612K
4