SavantIC Semiconductor Product Specification 2SC3346 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SA1329 ·High speed switching time : tstg=1.0µs(Typ.) ·Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A APPLICATIONS ·For high current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 12 A IB Base current 2 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3346 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=0.3A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.3A 0.9 1.2 V ICBO Collector cut-off current VCB=80V ;IE=0 10 µA IEBO Emitter cut-off current VEB=6V; IC=0 10 µA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=6A ; VCE=1V 40 fT Transition frequency IC=1A ; VCE=5V 80 MHz COB Output capacitance IE=0 ; VCB=10V,f=1MHz 220 pF 0.2 µs 1.0 µs 0.2 µs 80 UNIT V 240 Switching times Ton Turn-on time tstg Storage time tf IB1=-IB2=0.3A; RL=5E,VCC=30V Pw=20µs ;DutyF1% Fall time hFE-1 classifications O Y 70-140 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3346 SavantIC Semiconductor Product Specification 2SC3346 Silicon NPN Power Transistors 4