SavantIC Semiconductor Product Specification BD909 BD911 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD910 BD912 APPLICATIONS ·Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD909 VCBO Collector-base voltage 80 Open base BD911 VEBO V 100 BD909 Collector-emitter voltage Emitter-base voltage UNIT 80 Open emitter BD911 VCEO VALUE V 100 Open collector 5 V IC Collector current 15 A IB Base current 5 A PC Collector power dissipation 90 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC-25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.4 UNIT /W SavantIC Semiconductor Product Specification BD909 BD911 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BD909 MIN TYP. MAX UNIT 80 IC=0.1A; IB=0 BD911 V 100 VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=0.5 A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A;IB=2.5 A 3.0 V Base-emitter saturation voltage IC=10A;IB=2.5 A 2.5 V Base-emitter voltage IC=5A ; VCE=4V 1.5 V VCB=80V; IE=0 TC=150 VCB=100V; IE=0 TC=150 0.5 5 0.5 5 mA 1 mA 1 mA VBEsat VBE BD909 ICBO Collector cut-off current BD911 ICEO BD909 VCE=40V; IB=0 BD911 VCE=50V; IB=0 Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=4V 40 250 hFE-2 DC current gain IC=5A ; VCE=4V 15 150 hFE-3 DC current gain IC=10A ; VCE=4V 5 Transition frequency IC=0.5A ; VCE=4V 3 fT 2 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BD909 BD911 SavantIC Semiconductor Product Specification BD909 BD911 Silicon NPN Power Transistors 4