SAVANTIC 2SC3163

SavantIC Semiconductor
Product Specification
2SC3163
Silicon NPN Power Transistors
·Wit
DESCRIPTION
With TO-220C package
·High breakdown voltage
·High speed switching
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
6
A
IB
Base current
2
A
PC
Collector dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
MAX
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
2SC3163
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
ICEO
Collector cut-off current
VCE=400V ;IB=0
100
µA
ICBO
Collector cut-off current
VCB=500V ;IE=0
100
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
µA
hFE-1
DC current gain
IC=3A ; VCE=2V
15
hFE-2
DC current gain
IC=6A ; VCE=2V
8
Transition frequency
IC=0.6A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
400
UNIT
V
20
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC3163