SavantIC Semiconductor Product Specification 2SC3163 Silicon NPN Power Transistors ·Wit DESCRIPTION With TO-220C package ·High breakdown voltage ·High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A IB Base current 2 A PC Collector dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification 2SC3163 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICEO Collector cut-off current VCE=400V ;IB=0 100 µA ICBO Collector cut-off current VCB=500V ;IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE-1 DC current gain IC=3A ; VCE=2V 15 hFE-2 DC current gain IC=6A ; VCE=2V 8 Transition frequency IC=0.6A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX 400 UNIT V 20 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3163