SavantIC Semiconductor Product Specification BDW51C Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type BDW52C ·Excellent safe operating area APPLICATIONS ·For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 7 A PC Collector power dissipation 125 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.4 UNIT /W SavantIC Semiconductor Product Specification BDW51C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=2.5A 3.0 V Base-emitter saturation voltage IC=10A; IB=2.5A 2.5 V VBE Base-emitter on voltage IC=5A ; VCE=4V 1.5 V ICEO Collector cut-off current VCE=50V; IB=0 1.0 mA ICBO Collector cut-off current VCB=100V; IE=0 TC=150 0.5 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 20 hFE-2 DC current gain IC=10A ; VCE=4V 5 Transition frequency IC=0.5A ; VCE=4V 3 VBEsat fT CONDITIONS 2 MIN TYP. MAX 100 UNIT V 150 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 BDW51C