SavantIC Semiconductor Product Specification BDT88 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BDT87 APPLICATIONS ·Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -5 A PC Collector power dissipation 125 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC-25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 1.38 /W SavantIC Semiconductor Product Specification BDT88 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-7 A;IB=-0.7 A -1.6 V VBE Base-emitter voltage IC=-5A ; VCE=-4V -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -0.5 mA ICEO Collector cut-off current VCE=-60V; IB=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-0.5A ; VCE=-4V 40 hFE-2 DC current gain IC=-5A ; VCE=-4V 40 hFE-3 DC current gain IC=-10A ; VCE=-4V 5 Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS 2 MIN TYP. MAX -120 UNIT V 250 20 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BDT88