ISC BDT92

Inchange Semiconductor
Product Specification
BDT92
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-220C package
·Complement to type BDT91
APPLICATIONS
·For use in general purpose power amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-10
A
IB
Base current
-6
A
PC
Collector power dissipation
90
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.39
℃/W
TC≤25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BDT92
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-100mA; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-3 A;IB=-0.3 A
-1.1
V
VCEsat-2
Collector-emitter saturation voltage
IC=-10 A;IB=-3.3 A
-3.0
V
VBE
Base-emitter voltage
IC=-4A ; VCE=-4V
-1.6
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-0.1
mA
ICEO
Collector cut-off current
VCE=-30V; IB=0
-1.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-4A ; VCE=-4V
20
hFE-2
DC current gain
IC=-10A ; VCE=-4V
5
Transition frequency
IC=-0.5A ; VCE=-10V
4
fT
CONDITIONS
2
MIN
TYP.
MAX
-60
UNIT
V
200
MHz
Inchange Semiconductor
Product Specification
BDT92
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3