Inchange Semiconductor Product Specification BDT92 Silicon PNP Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type BDT91 APPLICATIONS ·For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -6 A PC Collector power dissipation 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.39 ℃/W TC≤25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BDT92 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-100mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A -1.1 V VCEsat-2 Collector-emitter saturation voltage IC=-10 A;IB=-3.3 A -3.0 V VBE Base-emitter voltage IC=-4A ; VCE=-4V -1.6 V ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA ICEO Collector cut-off current VCE=-30V; IB=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-4A ; VCE=-4V 20 hFE-2 DC current gain IC=-10A ; VCE=-4V 5 Transition frequency IC=-0.5A ; VCE=-10V 4 fT CONDITIONS 2 MIN TYP. MAX -60 UNIT V 200 MHz Inchange Semiconductor Product Specification BDT92 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3