SavantIC Semiconductor Product Specification BU2508DX Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of color TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 8 A ICM Collector current (Pulse) 15 A IB Base current (DC) 4 A IBM Base current (Pulse) 6 A Ptot Total power dissipation 45 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification BU2508DX Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.12A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=1.7A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 227 hFE-1 DC current gain IC=1A ; VCE=5V 13 hFE-2 DC current gain IC=4.5A ; VCE=1V VF Diode forward voltage IF=4.5A CC Collector capacitance IE=0 ; VCB=10V;f=1MHz V 13.5 4 V mA 7 2.0 2 UNIT 80 V pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU2508DX