SavantIC Semiconductor Product Specification BU2727DF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 825 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 12 A ICM Collector current -peak 30 A IB Base current (DC) 12 A IBM Base current -peak 25 A Ptot Total power dissipation 45 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BU2727DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) V(BR)EBO Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 825 Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.91A 1.0 V VBEsat Base-emitter saturation voltage IC=5A;IB=0.91A 1.0 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=5A ; VCE=1V Diode forward voltage IF=7A VF TYP. MAX V 13.5 V 110 mA 6 5.5 11 2.2 2 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 BU2727DF