SAVANTIC BU2506DF

SavantIC Semiconductor
Product Specification
BU2506DF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·Intended for use in horizontal deflection
circuits of colour TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
IC
Collector current (DC)
5
A
ICM
Collector current (Pulse)
8
A
IB
Base Collector current (DC)
3
A
IBM
Base current (Pulse)
5
A
Ptot
Total power dissipation
45
W
Tj
Tstg
Max.operating junction temperature
Storage temperature
TC=25
150
-65~150
SavantIC Semiconductor
Product Specification
BU2506DF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,
700
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.79A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.79A
1.1
V
ICES
Collector cut-off current
VCE=RatedVCE ;VBE=0
Tj=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
208
mA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
VF
Diode forward voltage
CC
Collector output capacitance
V
13.5
95
V
12
5.5
7.5
IF=3.0A
1.6
2.0
IE=0; f=1MHz;VCB=10V
47
2
UNIT
3.8
V
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
BU2506DF