SavantIC Semiconductor Product Specification BUH417D Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Switching power supply for TV’s and monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 7 A ICM Collector current -peak 12 A IB Base current (DC) 4 A IBM Base current -peak tp<5ms 7 A Ptot Total power dissipation TC=25 55 W tp<5ms Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BUH417D Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=4A ; IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=4A ; IB=1A 1.3 V ICES Collector cut-off current VCE=1700V; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 200 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4A ; VCE=5V 6 Diode forward voltage IF=4A VF CONDITIONS MIN TYP. MAX 700 UNIT V 36 2 V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case 2 MAX UNIT 2.27 /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUH417D