SavantIC Semiconductor Product Specification BUH313 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·Horizontal deflection for color TV ·Switch mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1300 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 5 A ICM Collector current-peak tp<5ms 10 A Ptot Total power dissipation TC=25 50 W Tj Tstg Operating junction temperature Storage temperature 150 -65~150 SavantIC Semiconductor Product Specification BUH313 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.75A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.75A 1.3 V ICES Collector cut-off current VCE=1300V; VBE=0 0.2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 5.5 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.8 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUH313