SAVANTIC BU2725DX

SavantIC Semiconductor
Product Specification
BU2725DX
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of color TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1700
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
12
A
ICM
Collector current-peak
30
A
IB
Base current (DC)
12
A
IBM
Base current-peak
20
A
Ptot
Total power dissipation
45
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
SavantIC Semiconductor
Product Specification
BU2725DX
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
7.5
13.5
Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=1.75 A
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=1.75 A
ICES
Collector cut-off current
VCE=BVCES; VBE=0
Tj=125
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
110
hFE-1
DC current gain
IC=1A ; VCE=5V
19
hFE-2
DC current gain
IC=7A ; VCE=1V
Diode forward voltage
IF=7A
VF
0.78
3.8
0.86
MAX
V
1.0
V
0.95
V
1.0
2.0
mA
mA
7.8
2.2
2
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU2725DX