SavantIC Semiconductor Product Specification BU2725DX Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of color TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 12 A ICM Collector current-peak 30 A IB Base current (DC) 12 A IBM Base current-peak 20 A Ptot Total power dissipation 45 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BU2725DX Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. 7.5 13.5 Emitter-base breakdown voltage IE=600mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.75 A VBEsat Base-emitter saturation voltage IC=7A ;IB=1.75 A ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 IEBO Emitter cut-off current VEB=7.5V; IC=0 110 hFE-1 DC current gain IC=1A ; VCE=5V 19 hFE-2 DC current gain IC=7A ; VCE=1V Diode forward voltage IF=7A VF 0.78 3.8 0.86 MAX V 1.0 V 0.95 V 1.0 2.0 mA mA 7.8 2.2 2 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU2725DX