SavantIC Semiconductor Product Specification BUW34 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 5 A PT Total power dissipation 125 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC.25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.4 UNIT /W SavantIC Semiconductor Product Specification BUW34 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICES Collector cut-off current VCE=500V ;VBE=0 TC=125 0.1 3.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 8 400 UNIT V 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A ;IB1=- IB2=1A VCC=250V 2 0.7 µs 3.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUW34