SAVANTIC S2055N

SavantIC Semiconductor
Product Specification
S2055N
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·High voltage,high speed
·Low collector saturation voltage
·Built-in damper diode
APPLICATIONS
·Color TV horizontal output applications
·Color TV switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
ABSOLUTE MAXIMUM RATINGS (TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-peak
15
A
IB
Base current
4
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
VALUE
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
S2055N
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IB=500mA ;VBE=-1.7V;L=40mH
VCE(sat)-1
Collector-emitter saturation voltage
IC=4.5A ;IB=2.0A
1.0
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=4.5A ;IB=1.0A
5.0
V
Base-emitter saturation voltage
IC=4.5A ;IB=1.0A
1.2
V
ICBO
Collector cut-off current
VCB=1500V; VBE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
300
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
30
hFE-2
DC current gain
IC=4.5A ; VCE=5V
4.5
9
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
95
pF
Transition frequency
IC=0.1A ; VCE=10V
2
MHz
VBE(sat)
fT
CONDITIONS
2
MIN
TYP.
MAX
700
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
S2055N