SavantIC Semiconductor Product Specification 2SD1651 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V 5 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1651 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A VBEsat Base-emitter saturation voltage ICBO MIN TYP. MAX 800 UNIT V 3.0 5.0 V IC=4A ;IB=0.8A 1.5 V Collector cut-off current VCB=800V; IE=0 10 µA ICES Collector cut-off current VCES=1500V; RBE=> 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V VF Diode forward voltage IF=5A 3 MHz 2.0 2 V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD1651