Inchange Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2N6666/6667/6668 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 固 Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER 2N6386 VCBO VCEO EMIC S E G N Collector-base voltage A H C IN Collector-emitter voltage 2N6387 Open emitter Emitter-base voltage IC Collector current-DC ICM Collector current-Pulse IB Base current-DC PC Collector power dissipation Tj Tstg VALUE 60 80 2N6386 40 2N6387 Open base UNIT 40 2N6388 2N6388 VEBO R O T UC OND CONDITIONS 60 V V 80 Open collector 5 2N6386 8 2N6387/6388 10 V A 15 A 0.25 A 65 W Junction temperature 150 ℃ Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6386 VCEO(SUS) Collector-emitter sustaining voltage VCEsat-2 Collector-emitter saturation voltage Base-emitter on voltage VBE-1 IC=0.2A, IB=0 2N6387 固 Collector cut-off current IC=3A ,IB=6mA 2N6387/6388 IC=5A ,IB=10mA 2N6386 IC=8A ,IB=80mA 2N6387/6388 IC=10A ,IB=100mA 2N6386 IC=3A ; VCE=3V 2N6387/6388 IC=5A ; VCE=3V 2N6386 IC=8A ; VCE=3V 2N6387/6388 IC=10A ; VCE=3V IEBO Emitter cut-off current hFE-1 DC current gain hFE-2 Cob V M E S GE 2N6387 2N6386 VCE=40V, IB=0 2N6387 VCE=60V, IB=0 2N6388 VCE=80V, IB=0 VEB=5V; IC=0 2N6386 IC=3A ; VCE=3V 2N6387/6388 IC=5A ; VCE=3V 2N6386 IC=8A ; VCE=3V 2N6387/6388 IC=10A ; VCE=3V 1000 DC current gain 2.0 V 3.0 V 2.8 V 4.5 V 0.3 3.0 0.3 3.0 0.3 3.0 mA 1.0 mA 5.0 mA R O T UC D N O IC VCB=40V, VBE=-1.5V TC=125℃ VCB=60V, VBE=-1.5V TC=125℃ VCB=80V, VBE=-1.5V TC=125℃ 2N6386 N A H INC Collector cut-off current UNIT 60 2N6386 2N6388 ICEO MAX 80 导体 半 电 Base-emitter on voltage VBE-2 ICBO Collector-emitter saturation voltage TYP. 40 2N6388 VCEsat-1 MIN 20000 100 Output capacitance IE=0 ; VCB=10V,f=0.1MHz 200 pF THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 VALUE UNIT 1.92 ℃/W Inchange Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC M E S GE N A H INC R O T UC Fig.2 Outline dimensions 3