SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 DESCRIPTION ·With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP120/121/122 APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP125 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP126 Open emitter Emitter-base voltage IC -80 TIP127 -100 TIP125 -60 TIP126 UNIT -60 Open base TIP127 VEBO VALUE -80 V V -100 Open collector -5 V Collector current-DC -5 A ICM Collector current-Pulse -8 A IB Base current-DC -120 mA PC Collector power dissipation TC=25 65 Ta=25 2 Tj Junction temperature 150 Tstg Storage temperature -65~150 W SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP125 VCEO(SUS) Collector-emitter sustaining voltage TIP126 MIN TYP. MAX UNIT -60 IC=-0.1A, IB=0 V -80 -100 TIP127 VCE(sat)-1 Collector-emitter saturation voltage IC=-3A ,IB=-12mA -2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=-5A ,IB=-20mA -4.0 V Base-emitter on voltage IC=-3.0A ; VCE=-3V -2.5 V -0.2 mA -0.5 mA -2 mA 300 pF VBE ICBO ICEO Collector cut-off current Collector cut-off current TIP125 VCB=-60V, IE=0 TIP126 VCB=-80V, IE=0 TIP127 VCB=-100V, IE=0 TIP125 VCE=-30V, IB=0 TIP126 VCE=-40V, IB=0 TIP127 VCE=-50V, IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.5A ; VCE=-3V 1000 hFE-2 DC current gain IC=-3.0A ; VCE=-3V 1000 COB Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 TIP125/126/127 SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 4 TIP125/126/127