SAVANTIC TIP126

SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP125/126/127
DESCRIPTION
·With TO-220C package
·DARLNGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP120/121/122
APPLICATIONS
·Designed for general–purpose amplifier
and low–speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
TIP125
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
TIP126
Open emitter
Emitter-base voltage
IC
-80
TIP127
-100
TIP125
-60
TIP126
UNIT
-60
Open base
TIP127
VEBO
VALUE
-80
V
V
-100
Open collector
-5
V
Collector current-DC
-5
A
ICM
Collector current-Pulse
-8
A
IB
Base current-DC
-120
mA
PC
Collector power dissipation
TC=25
65
Ta=25
2
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
W
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP125/126/127
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP125
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP126
MIN
TYP.
MAX
UNIT
-60
IC=-0.1A, IB=0
V
-80
-100
TIP127
VCE(sat)-1
Collector-emitter saturation voltage
IC=-3A ,IB=-12mA
-2.0
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=-5A ,IB=-20mA
-4.0
V
Base-emitter on voltage
IC=-3.0A ; VCE=-3V
-2.5
V
-0.2
mA
-0.5
mA
-2
mA
300
pF
VBE
ICBO
ICEO
Collector
cut-off current
Collector
cut-off current
TIP125
VCB=-60V, IE=0
TIP126
VCB=-80V, IE=0
TIP127
VCB=-100V, IE=0
TIP125
VCE=-30V, IB=0
TIP126
VCE=-40V, IB=0
TIP127
VCE=-50V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-3V
1000
hFE-2
DC current gain
IC=-3.0A ; VCE=-3V
1000
COB
Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
TIP125/126/127
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
4
TIP125/126/127