SavantIC Semiconductor Product Specification TIP514 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For use in high-frequency drivers In aduio amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V -5 A IC Collector current PD Total power dissipation TC=100 20 W Ta=100 2 Tj Junction temperature 175 Tstg Storage temperature -55~175 SavantIC Semiconductor Product Specification TIP514 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA ; IB=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V VBE(sat) Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-150V; IE=0 -10 µA ICEO Collector cut-off current VCE=-150V; IB=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE DC current gain IC=-2.5A ; VCE=-4V 30 Transition frequency IC=-0.5A ; VCE=-4V 40 fT CONDITIONS 2 MIN TYP. MAX UNIT 150 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 TIP514