MMBD318 Series MMBD318/MMBD318A/MMBD318C/MMBD318S Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free FEATURES • Surface Mount High Votlage Switching Diode SC-59 RoHS Compliant Product High Reverse Breakdown Voltage Ultra high speed Switching High Conductance A V Min Max A 2.700 3.100 B 1.400 1.600 C 1.000 1.400 L B S Top View MECHANICAL DATA Dim G Case: SC59, Molded Plastic C Terminals: Solderable per MIL-STD-202, Method 208 H D Polarity: See Diagrams Below Weight: 0.008 grams (approx.) J K 3 Mounting Position: Any D 0.350 0.500 G 1.800 2.000 H 0.000 0.100 J 0.085 0.177 K 0.400 0.600 L 0.850 1.150 S 2.400 2.800 V 0.450 0.550 All Dimension in mm 1 2 3 1 3 3 1 2 2 MMB D318A Marking: LD7 MMBD318 Marking: LD6 1 3 2 1 MMB D318C Marking: LD8 2 MMB D318S Marking: LD9 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Ratings Unit Max.Repetitive Peak Reverse Voltage Parameter V RRM 350 V Max.RMS Voltage V RMS 212 V Max. DC Blocking Voltage VDC 300 V Max. Average Forward Rectified Current Io 225 mA Typical Junction Capacitance between Terminal (Note 1) Cj 5.0 pF Max. Reverse Recovery Time (Note2) Trr 50 ns I FSM 4 Non-Repetive Peak Forward surge Current @Tp=1.0us @Tp= 1.0s A 1 Power Dissipation PD 350 mW Thermal Resistance Junction to Ambient Air RθJA 357 °C /W Operation and Storage Temperature Range Tj ,TSTG °C -60~+150 Electrical Characteristics (AT TA = 25°C unless otherwise noted) Characteristics Reverse Breakdown Voltage. IR=150uA Average Reverse Current. VR=240V, TA=25 °C VR=240V, TA=150°C Forward Voltage Symbol Min. Max. Unit VR 350 - V - 100 nA - 100 uA - 1.0 V IR VF Note: 1. Measured at 1.0 MHz and applied reverse of 0 voltage 2. Measured at applied forware current of 30mA, RL=100Ω and recovery to IRR=-3mA 3. ESD sensitive product handling required. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 MMBD318 Series MMBD318/MMBD318A/MMBD318C/MMBD318S Elektronische Bauelemente IF, INSTANTANEOUS FORWARD CURRENT (mA) Surface Mount High Votlage Switching Diode Pd, POWER DISSIPATION (mW) 500 400 300 200 100 0 100 0 1000 100 Tj = 150°C 10 Tj = 25°C 1.0 0.1 0.01 0 400 1200 800 1600 2000 200 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2 Typical Forward Characteristics, per element TA, AMBIENT TEMPERATURE, (°C) Fig. 1 Power Derating Curve, total package 1.1 1000 CT, TOTAL CAPACITANCE (pF) Tj = 150°C 100 10 Tj = 75°C 1.0 0.1 Tj = 25°C 1.0 0.9 0.8 0.01 0.7 0.001 0 50 100 150 200 250 300 350 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics, per element http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 0.01 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance vs. Reverse Volta ge, per element Any changing of specification will not be informed individual Page 2 of 2