STT2603
-5A, -20V,RDS(ON) 65m Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT2603 utilized advanced processing techniques to achieve the lowest
possible on-resistance, extremely efficient and cost-effectiveness device.
The STT2603 is universally used for all commercial industrial surface
mount application .
Features
* Small package outline
* Simple drive requirement
D
6
D
1
D
S
S
4
REF.
A
A1
A2
c
D
E
E1
2603
Date Code
G
D
5
2
D
3
G
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current (Note 3)
ID@TA=25к
-5
A
Continuous Drain Current (Note 3)
ID@TA=70к
-4
A
IDM
-20
A
PD@TA=25к
2
W
0.016
W /e
C
-55~+150
e
C
Pulsed Drain Current (Note 1,2)
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient (Note 3) (Max)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
62.5
Unit
e
C /W
Any changing of specification will not be informed individual
Page 1 of 4
STT2603
-5A, -20V,RDS(ON) 65mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVDSS
-20
_
_
V
BVDS/ Tj
_
-0.1
_
V/ C
VGS(th)
-0.5
_
-1.2
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-10
uA
VDS=-16V,VGS=0
_
_
53
_
_
65
_
_
120
VGS=-2.5V, ID=-2.0A
_
_
250
VGS=-1.8V, ID=-1.0A
Qg
_
10.6
16
Gate-Source Charge
Qgs
_
2.32
_
Gate-Drain ("Miller") Charge
Qgd
3.68
_
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
o
Drain-Source Leakage Current (Tj=25 C)
o
Drain-Source Leakage Current (Tj=55 C)
Static Drain-Source On-Resistance
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
2
IDSS
RDS(ON)
_
Td(ON)
_
5.9
_
Tr
_
3.6
_
Td(Off)
_
32.4
_
Tf
_
2.6
_
_
740
1200
167
_
126
_
Ciss
_
o
Test Condition
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=-1mA
VGS=-10V, ID=-4.5A
mΩ
nC
VGS=-4.5V, ID=-4.2A
ID=-4.2A
VDS=-16V
VGS=-4.5V
VDD=-15V
ID=-4.2A
nS
VGS=-10V
RG=6 Ω
RD=3.6Ω
pF
VGS=0V
VDS=-15V
S
VDS=-5V, ID=-2.8A
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Gfs
_
9
_
Min.
Typ.
Max.
Unit
Test Condition
_
_
-1.2
V
IS=-1.2A, VGS=0V.
Forward Transconductance
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time
Symbol
VDS
2
Reverse Recovery Charge
Trr
Qrr
_
_
27.7
22
_
_
nS
Is=-4.2A, VGS=0V
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
O
3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
STT2603
Elektronische Bauelemente
-5A, -20V,RDS(ON) 65mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
STT2603
Elektronische Bauelemente
-5A, -20V,RDS(ON) 65m Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4