SSG9922E 6.8A, 20V,RDS(ON) 20mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description 0.19 0.25 0.40 0.90 The SSG9922E provide the designer with the best combination of fast switching, 45 ruggedized device design, low on-resistance and cost-effectiveness. o 0.375 REF 6.20 5.80 0.25 3.80 4.00 Features 1.27Typ. 0.35 0.49 0.100.25 4.80 5.00 * Optimal DC/DC Battery Application o 0 o 8 * Low On-Resistance 1.35 1.75 Dimensions in millimeters * Capable Of 2.5V Gate Drive D1 D1 D2 D2 8 7 6 5 9922ESS G1 Date Code 1 S1 2 G1 D1 3 4 S2 G2 D2 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Ratings Unit VDS 20 V ±12 V o 6.8 A o ID@TA=70 C 5.4 A IDM 25 A 2 W VGS 3 Continuous Drain Current, VG [email protected] ID@TA=25 C 3 Continuous Drain Current , VG [email protected] Pulsed Drain Current Symbol 1 o PD@TA=25 C Total Power Dissipation 0.016 Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 Symbol Ratings o W/ C o C Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2004 Rev. B 3 Max. Rthj-a 62.5 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 SSG9922E 6.8A, 20V,RDS(ON) 20mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance2 Symbol Min. Typ. Max. Unit BVDSS 20 _ _ V BVDS/ Tj _ 0.05 _ V/ oC VGS(th) 0.5 _ 1.2 IGSS _ _ _ _ _ _ IDSS RDS(ON) ±10 nA VGS=±12V 10 uA VDS=20V,VGS=0 _ 100 uA VDS=16V,VGS=0 _ 20 25 Qg _ 25 40 Gate-Source Charge Qgs _ 3 _ Gate-Drain ("Miller") Charge Qgd 9 _ 11 _ 12 _ 47 _ Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Td(ON) _ Tr _ Td(Off) _ Tf _ Ciss Output Capacitance _ Coss _ _ Crss _ Forward Transconductance Gfs _ Gate Resistance Rg _ Reverse Transfer Capacitance Reference to 25oC, ID=1mA VDS=VGS, ID=1mA _ 2 VGS=0V, ID=250uA V _ Total Gate Charge Test Condition 23 2770 280 _ 240 _ 22 _ _ VGS=4.5V, ID=6A VGS=2.5V, ID=4A nC ID=6A VDS=16V VGS=4.5V VDD=15V ID=1A nS VGS=4.5V RG=3.3 Ω RD=15 Ω _ 1730 2.2 mΩ pF VGS=0V VDS=20V S VDS=4.5V, ID=6A Ω f=1.0MHz f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Symbol VDS 2 Reverse Recovery Charge Trr Qrr Min. Typ. _ _ _ _ 24 18 Max. Unit 1.2 V IS =0.84A , VGS=0V. nS IS =6A , VGS=0V. dl/dt=100A/us _ _ nC Test Condition Notes: 1.Pulse width limited by safe operating area. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 135OC/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 2 of 4 SSG9922E 6.8A, 20V,RDS(ON) 20mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2004 Rev. B Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SSG9922E 6.8A, 20V,RDS(ON) 20mΩ Elektronische Bauelemente Fig 7. Gate Charge Characteristics N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics 135 Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2004 Rev. B /W Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4