SSM2308
3A, 60V,RDS(ON) 160mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-223
Description
The SSM2308 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SSM2308 is universally used for all commercialindustrial surface mount applications.
Features
* Simple Drive Requirement
* Small Package Outline
REF.
D
Date Code
A
C
D
E
I
H
2 3 0 8
G
G
D
S
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current, VGS @4.5V
Pulsed Drain Current
60
V
VGS
±20
V
3.0
A
ID@TA=70 C
2.3
A
IDM
10
A
2.7
W
0.02
W / oC
o
Continuous Drain Current, VGS @4.5V
1,2
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
Unit
VDS
ID@TA=25 oC
3
Ratings
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
45
Unit
o
C/W
Any changing of specification will not be informed individual
Page 1 of 4
SSM2308
3A, 60V,RDS(ON) 160mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
60
_
BVDS/ Tj
_
VGS(th)
1.0
_
3.0
V
IGSS
_
_
±100
nA
VGS=±20V
_
_
10
uA
VDS=60V,VGS=0
_
_
25
uA
VDS=48V,VGS=0
_
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=70 C )
Static Drain-Source On-Resistance
IDSS
RD S (O N )
_
Gate-Drain ("Miller") Charge
Qgd
Input Capacitance
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
160
10
Qgs
Fall Time
V/ C
6
Gate-Source Charge
Turn-off Delay Time
_
220
_
Rise Time
V
_
Qg
_
_
1.6
_
3
_
6
_
5
_
16
_
3
_
490
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
40
Forward Transconductance
Gfs
_
5
55
Unit
_
_
Total Gate Charge2
Turn-on Delay Time2
0.05
Max.
o
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VDS=VGS, ID=250uA
VGS=10V, ID=2A
VGS=4.5V, ID=1.7A
nC
ID=3A
VDS=48V
VGS= 4.5V
VDD=30V
ID=1A
nS
VGS=10V
RG=3.3Ω
RD=30 Ω
780
_
pF
VGS=0V
VDS=25V
S
VDS=5V, ID=3A
f=1.0MHz
_
_
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time
Trr
_
25
_
26
_
Reverse Recovery Change
Q rr
_
1.2
Unit
Test Condition
V
IS=1.2A, VGS=0V.
nS
IS=3A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
2
o
3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSM2308
Elektronische Bauelemente
3A, 60V,RDS(ON) 160mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSM2308
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
3A, 60V,RDS(ON) 160mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
120
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
/W
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4