SMG2304A
2.5A, 30V,RDS(ON) 117mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
L
SC-59
Description
The SMG2304A utilized advanced processing
techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is
universally used for all commercial-industrial
applications.
S
2
3
Top View
B
1
D
G
J
C
K
H
Features
Drain
Gate
* Small Package Outline
* Simple Drive Requirment
Source
D
Dim
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
G
Marking : 2304A
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current
2.5
A
o
ID@TA=70 C
2.0
A
IDM
10
A
1.38
W
0.01
W / oC
-55~+150
o
PD@TA=25 C
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
V
V
o
Total Power Dissipation
30
±20
ID@TA=25 C
3
Unit
o
VGS
3
Ratings
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
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01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG2304A
2.5A, 30V,RDS(ON) 117mΩ
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
N-Channel Enhancement Mode Power Mos.FET
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
BVDSS
30
_
_
V
BVDS/ Tj
_
0.1
_
V/
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=±20V
_
_
1
uA
VDS=30V,VGS=0
_
_
10
uA
VDS=24V,VGS=0
_
_
117
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=70 oC)
2
Static Drain-Source On-Resistance
IDSS
RDS(ON)
_
Qg
_
Gate-Source Charge
Qgs
_
0 .8
Gate-Drain ("Miller") Charge
Qgd
_
1.8
_
5
_
9
_
Total Gate Charge 2
Turn-on Delay Time 2
Rise Time
Td(ON)
Tr
Turn-off Delay Time
Fall Time
Input Capacitance
_
_
_
190
3
5
_
_
Td(Off)
_
Tf
_
2
_
_
120
190
62
_
24
_
2
_
Ciss
_
11
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VGS=10V, ID=2.5A
mΩ
nC
VGS=4.5V, ID=2A
ID=2.5A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
nS
VGS=10V
RG=3.3Ω
RD=15Ω
pF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
Gate Resistance
Rg
_
Symbol
Min.
Typ.
VSD
_
_
1.2
Reverse Recovery Time2
Trr
_
24
_
nS
Reverse Recovery Charge
Qrr
_
23
_
nC
1.67
Test Condition
VGS=0V
VDS=25V
f=1.0MHz
S
VDS=10V, I D=2.5A
_
Ω
f=1.0MHz
Max.
Unit
Test Condition
V
IS=1.2A, VGS=0V.
Source-Drain Diode
Parameter
Forward On Voltage
2
Is=2A,VGS=0V
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG2304A
2.5A, 30V,RDS(ON) 117mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
http://www.SeCoSGmbH.com/
Reverse Diode
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SMG2304A
2.5A, 30V,RDS(ON) 117mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4